Nexperia has introduced a new series of high-performance gate driver ICs designed for driving both high-side and low-side ...

Rohm Semiconductor has announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

Company ships early bare die test samples of new low on-resistance devices for automotive traction inverters Toshiba ...

As it becomes the first SiC company to transition to pure-play 200-mm, company announces cost cutting measures to yield ...

The automotive semiconductor market is expecting a CAGR of 11 percent between 2023 and 2029 to almost $100 billion at the end ...

Cambridge GaN Devices and Qorvo have partnered to bring together motor control and power efficiency technologies in the ...

Siemens Smart Infrastructure has launched its first fully electronic starter with semiconductor technology. Compared to ...

Sanan Semiconductor is expanding its SiC power product portfolio with the introduction of 1700V and 2000V devices for ...

EPC has announced that the Full Commission of the US International Trade Commission (ITC) has affirmed the ITC’s initial determination that Innoscience infringed EPC’s foundational patent for GaN ...

Stellantis N.V. and Infineon Technologies will work jointly on the power architecture for Stellantis’ electric vehicles to ...

Navitas Semiconductor, a developer of GaN power ICs and SiC technology, has announced unaudited financial results for the ...

Infineon Technologies is launching the new MOTIX TLE9189 gate driver IC for safety-critical applications for 12 V brushless ...